Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness
نویسندگان
چکیده
InGaN/GaN multiple-quantum-well MQW light-emitting diodes with varied InGaN quantum well thicknesses are fabricated and characterized. The investigation of luminous efficiency versus current density reveals a variety of efficiency droop behaviors. It is found that the efficiency droop can be drastically reduced by increasing the quantum well thickness of the MQW structures. On the other hand, relative internal quantum efficiency IQE measurements indicate that a thinner well results to higher IQEs owing to the greater spatial overlap of electron and hole distribution functions. © 2007 American Institute of Physics. DOI: 10.1063/1.2805197
منابع مشابه
Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes
Articles you may be interested in Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes Effect of an electron blocking layer on the piezoelectric field in InGaN/GaN multiple...
متن کاملEfficiency droop in InGaN/GaN multiple quantum well light-emitting diodes with nonuniform current spreading
We demonstrate that the efficiency droop phenomenon in multiple quantum well InGaN/GaN light-emitting diodes (LEDs) may be connected to the current crowding effect. A numerical model of internal quantum efficiency calculation is presented that takes into account nonuniform lateral carrier injection in the active region. Based on this model, we examine the effect of current crowding on the effic...
متن کاملGaN microdisk light emitting diodes
Articles you may be interested in Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes Appl. High-density plasma-induced etch damage of InGaN/GaN multiple quantum well light-emitting diodes
متن کاملEffective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field
A critical issue in GaN-based high power light-emitting diodes (LEDs) is how to suppress the efficiency droop problem occurred at high current injection while improving overall quantum efficiency, especially in conventional c-plane InGaN/GaN quantum well (QW), without using complicated bandgap engineering or unconventional materials and structures. Although increasing thickness of each QW may d...
متن کاملEffect of Internal Electric Field in Well Layer of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes on Efficiency Droop
We investigate the effect of internal electric field in InGaN well layer of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) on efficiency droop behavior. The simulation results show that the internal electric field in InGaN well layers of Ga-polar LEDs is same as the direction of external electric field by forward bias voltage, resulting in a strong efficiency droop. However, N-pol...
متن کامل